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| SID75N12 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions TC = 25oC, unless otherwise specified Values 1200 Units V A A V o TC= 25(80) C TC= 25(80)oC, tP =1ms _ TOPERATION < Tstg o 75(60) 150(120) _ +20 _ 40...+150(125) 2500 75(50) 150(120) 550 95(65) 150(120) 720 C AC, 1min Visol Inverse Diode IF = -IC IFRM V A A A A A A TC= 25(80)oC TC= 25(80)oC, tP =1ms IFSM tP =10ms; sin.;Tj=150oC Freewheeling diode TC= 25(80)oC IF = -IC IFRM TC= 25(80)oC, tP =1ms IFSM tP =10ms; sin.;Tj=150oC SID75N12 NPT IGBT Modules Characteristics Symbol IGBT VGE(th) ICES VCE(TO) rCE VCE(sat) Cies Coes Cres LCE RCC'+EE' Conditions VGE = VCE, IC =2mA VGE = 0; VCE = VCES; Tj = 25(125)oC Tj = 25(125)oC VGE = 15V, Tj = 25(125)oC IC =100A; VGE = 15V; chip level under following conditions VGE = 0, VCE = 25V, f = 1MHz TC = 25oC, unless otherwise specified min. 4.5 typ. max. Units V mA V m V nF nH m ns ns ns ns mJ V V m A uC mJ V V m A uC mJ K/W K/W K/W K/W Nm Nm g td(on) tr td(off) tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF = 75A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 125oC rT Tj = 125oC IRRM IF = 50A; Tj = 25(125)oC Qrr di/dt = 800A/us Err VGE = V FWD under following conditions: VF = VEC IF = 50A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 125oC rT Tj = 125oC IRRM IF =50A; Tj = 25oC Qrr di/dt = A/us Err VGE = V Thermal Characteristics Rth(j-c) per IGBT Rth(j-c)D per Inverse Diode Rth(j-c)FD per FWD Rth(c-s) per module Mechanical Data Ms to heatsink M6 Mt to terminals M5 w res., terminal-chip TC = 25(125)oC under following conditions: VCC = 600V, IC = 75A RGon = RGoff = 22 , Tj = 125oC VGE = 15V 5.5 6.5 0.1 0.3 1.4(1.6) 1.6(1.8) 22(30) 28(38) 2.5(3.1) 3(3.7) 3.3 4.3 0.5 0.6 0.22 0.3 30 0.75(1) 44 56 380 70 8(5) 2(1.8) 18 23(35) 100 100 500 100 2.5 1.2 22 1.85(1.6) 12 27(40) 2.2 1.2 15 0.27 0.6 0.5 0.05 3 2.5 5 5 160 |
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